共 47 条
Switchable two-dimensional electron gas based on ferroelectric Ca:SrTiO3
被引:22
作者:

Brehin, Julien
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Univ Paris Saclay, Unite Mixte Phys, Thales, CNRS, F-91767 Palaiseau, France Univ Paris Saclay, Unite Mixte Phys, Thales, CNRS, F-91767 Palaiseau, France

Trier, Felix
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Univ Paris Saclay, Unite Mixte Phys, Thales, CNRS, F-91767 Palaiseau, France Univ Paris Saclay, Unite Mixte Phys, Thales, CNRS, F-91767 Palaiseau, France

Vicente-Arche, Luis M.
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Univ Paris Saclay, Unite Mixte Phys, Thales, CNRS, F-91767 Palaiseau, France Univ Paris Saclay, Unite Mixte Phys, Thales, CNRS, F-91767 Palaiseau, France

Hemme, Pierre
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Univ Paris, Lab Mat & Phenomenes Quant, UMR 7162, CNRS, F-75205 Paris 13, France Univ Paris Saclay, Unite Mixte Phys, Thales, CNRS, F-91767 Palaiseau, France

Noel, Paul
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Univ Grenoble Alpes, CEA, CNRS, Grenoble INP,Spintec, F-38000 Grenoble, France Univ Paris Saclay, Unite Mixte Phys, Thales, CNRS, F-91767 Palaiseau, France

Cosset-Cheneau, Maxen
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Univ Grenoble Alpes, CEA, CNRS, Grenoble INP,Spintec, F-38000 Grenoble, France Univ Paris Saclay, Unite Mixte Phys, Thales, CNRS, F-91767 Palaiseau, France

Attane, Jean-Philippe
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Univ Grenoble Alpes, CEA, CNRS, Grenoble INP,Spintec, F-38000 Grenoble, France Univ Paris Saclay, Unite Mixte Phys, Thales, CNRS, F-91767 Palaiseau, France

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Sander, Anke
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Univ Paris Saclay, Unite Mixte Phys, Thales, CNRS, F-91767 Palaiseau, France Univ Paris Saclay, Unite Mixte Phys, Thales, CNRS, F-91767 Palaiseau, France

Gallais, Yann
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Univ Paris, Lab Mat & Phenomenes Quant, UMR 7162, CNRS, F-75205 Paris 13, France Univ Paris Saclay, Unite Mixte Phys, Thales, CNRS, F-91767 Palaiseau, France

Sacuto, Alain
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Univ Paris, Lab Mat & Phenomenes Quant, UMR 7162, CNRS, F-75205 Paris 13, France Univ Paris Saclay, Unite Mixte Phys, Thales, CNRS, F-91767 Palaiseau, France

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Garcia, Vincent
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Univ Paris Saclay, Unite Mixte Phys, Thales, CNRS, F-91767 Palaiseau, France Univ Paris Saclay, Unite Mixte Phys, Thales, CNRS, F-91767 Palaiseau, France

Fusil, Stephane
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Univ Paris Saclay, Unite Mixte Phys, Thales, CNRS, F-91767 Palaiseau, France Univ Paris Saclay, Unite Mixte Phys, Thales, CNRS, F-91767 Palaiseau, France

Barthelemy, Agnes
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Univ Paris Saclay, Unite Mixte Phys, Thales, CNRS, F-91767 Palaiseau, France Univ Paris Saclay, Unite Mixte Phys, Thales, CNRS, F-91767 Palaiseau, France

Cazayous, Maximilien
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Univ Paris, Lab Mat & Phenomenes Quant, UMR 7162, CNRS, F-75205 Paris 13, France Univ Paris Saclay, Unite Mixte Phys, Thales, CNRS, F-91767 Palaiseau, France

Bibes, Manuel
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机构:
Univ Paris Saclay, Unite Mixte Phys, Thales, CNRS, F-91767 Palaiseau, France Univ Paris Saclay, Unite Mixte Phys, Thales, CNRS, F-91767 Palaiseau, France
机构:
[1] Univ Paris Saclay, Unite Mixte Phys, Thales, CNRS, F-91767 Palaiseau, France
[2] Univ Paris, Lab Mat & Phenomenes Quant, UMR 7162, CNRS, F-75205 Paris 13, France
[3] Univ Grenoble Alpes, CEA, CNRS, Grenoble INP,Spintec, F-38000 Grenoble, France
[4] Univ Paris Saclay, Lab Struct Proprietes & Modelisat Solides, Cent Supelec, CNRS,UMR8580, F-91190 Gif Sur Yvette, France
基金:
欧洲研究理事会;
关键词:
TRANSITION;
SR1-XCAXTIO3;
MOBILITY;
SRTIO3;
D O I:
10.1103/PhysRevMaterials.4.041002
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
Two-dimensional electron gases (2DEGs) can form at the surface of oxides and semiconductors or in carefully designed quantum wells and interfaces. Depending on the shape of the confining potential, 2DEGs may experience a finite electric field, which gives rise to relativistic effects such as the Rashba spin-orbit coupling. Although the amplitude of this electric field can be modulated by an external gate voltage, which in turn tunes the 2DEG carrier density, sheet resistance and other related properties, this modulation is volatile. Here, we report the design of a "ferroelectric" 2DEG whose transport properties can be electrostatically switched in a nonvolatile way. We generate a 2DEG by depositing a thin Al layer onto a SrTiO3 single crystal in which 1% of Sr is substituted by Ca to make it ferroelectric. Signatures of the ferroelectric phase transition at 25 K are visible in the Raman response and in the temperature dependences of the carrier density and sheet resistance that shows a hysteretic dependence on electric field as a consequence of ferroelectricity. We suggest that this behavior may be extended to other oxide 2DEGs, leading to novel types of ferromagnet-free spintronic architectures.
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