355 GHz oscillator with GaAs TUNNETT diode

被引：21
作者：
Eisele, H [1 ]
机构：
[1] Univ Leeds, Sch Elect & Elect Engn, Inst Microwaves & Photon, Leeds LS2 9JT, W Yorkshire, England
来源：
ELECTRONICS LETTERS | 2005年 / 41卷 / 06期
关键词：
D O I：
10.1049/el:20058165
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A GaAs tunnel injection transit-time (TUNNETT) diode on a diamond heatsink yielded the state-of-the-art RF power level of more than 140 mu W at 355 GHz in third-harmonic mode. The oscillator used the configuration of a WR-10 waveguide cavity for the TUNNETT diode and a WR-2 dielectric-filled conical horn with the appropriate waveguide transition for power measurements with a quasi-optical absolute power meter.
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收藏
页码：329 / 331
页数：3
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