Limits of the modulation response of a single-mode proton implanted VCSEL

被引：24

作者：

Satuby, Y ^{[1
]}

Orenstein, M ^{[1
]}

机构：

[1] Technion Israel Inst Technol, Dept Elect Engn, Adv Optoelect Res Ctr, IL-32000 Haifa, Israel

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1998年 / 10卷 / 06期

关键词：

laser modes; laser modulation; surface-emitting semiconductor lasers;

D O I：

10.1109/68.681474

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The limitations of the direct modulation bandwidth for proton implanted vertical-cavity lasers were explored, The measured damping factor of an optimized device, implies a possible bandwidth of up to 80 GHz, However, the intrinsic (parasitic free) carrier transport/capture time of similar to 15 ps limits substantially the actual frequency response. The actual measured bandwidth-14.5 GHz was limited also by the emerging of higher lasing modes. The combined effects of shape, size and implantation dose should be optimized to reach the limit of the direct modulation of these lasers.

引用

页码：760 / 762

页数：3

共 9 条

[1] High-frequency modulation of oxide-confined vertical cavity surface emitting lasers [J].

Lear, KL ;

Mar, A ;

Choquette, KD ;

Kilcoyne, SP ;

Schneider, RP ;

Geib, KM .

ELECTRONICS LETTERS, 1996, 32 (05) :457-458

[2] HIGH-SPEED QUANTUM-WELL LASERS AND CARRIER TRANSPORT EFFECTS [J].

NAGARAJAN, R ;

ISHIKAWA, M ;

FUKUSHIMA, T ;

GEELS, RS ;

BOWERS, JE .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1992, 28 (10) :1990-2008

[3] EFFICIENT CONTINUOUS WAVE OPERATION OF VERTICAL-CAVITY SEMICONDUCTOR-LASERS USING BURIED-COMPENSATION LAYERS TO OPTIMIZE CURRENT FLOW [J].

ORENSTEIN, M ;

STOFFEL, NG ;

VONLEHMEN, AC ;

HARBISON, JP ;

FLOREZ, LT .

APPLIED PHYSICS LETTERS, 1991, 59 (01) :31-33

[4] HIGH MODULATION EFFICIENCY OF INTRACAVITY CONTACTED VERTICAL-CAVITY LASERS [J].

SCOTT, JW ;

THIBEAULT, BJ ;

MAHON, CJ ;

COLDREN, LA ;

PETERS, FH .

APPLIED PHYSICS LETTERS, 1994, 65 (12) :1483-1485

[5] HIGH-SPEED VERTICAL-CAVITY SURFACE-EMITTING LASER [J].

SHTENGEL, G ;

TEMKIN, H ;

BRUSENBACH, P ;

UCHIDA, T ;

KIM, M ;

PARSONS, C ;

QUINN, WE ;

SWIRHUN, SE .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1993, 5 (12) :1359-1362

[6] LARGE AND SMALL-SIGNAL DYNAMICS OF VERTICAL CAVITY SURFACE EMITTING LASERS [J].

TAUBER, D ;

WANG, G ;

GEELS, RS ;

BOWERS, JE ;

COLDREN, LA .

APPLIED PHYSICS LETTERS, 1993, 62 (04) :325-327

[7] High-speed characteristics of low-optical loss oxide-apertured vertical-cavity lasers [J].

Thibeault, BJ ;

Bertilsson, K ;

Hegblom, ER ;

Strzelecka, E ;

Floyd, PD ;

Naone, R ;

Coldren, LA .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1997, 9 (01) :11-13

[8] NONLINEAR GAIN COEFFICIENTS IN SEMICONDUCTOR QUANTUM-WELL LASERS - EFFECTS OF CARRIER DIFFUSION, CAPTURE, AND ESCAPE [J].

TSAI, CY ;

LO, YH ;

SPENCER, RM ;

EASTMAN, LF .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1995, 1 (02) :316-330

[9] IMPEDANCE, MODULATION RESPONSE, AND EQUIVALENT-CIRCUIT OF ULTRA-HIGH-SPEED IN0.35GA0.65AS/GAAS MQW LASERS WITH P-DOPING [J].

WEISSER, S ;

ESQUIVIAS, I ;

TASKER, PJ ;

RALSTON, JD ;

ROSENZWEIG, J .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1994, 6 (07) :782-785

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