Effects of boron composition on tunneling magnetoresistance ratio and microstructure of CoFeB/MgO/CoFeB pseudo-spin-valve magnetic tunnel junctions

被引：29

作者：

Kodzuka, M. ^{[1
]}

Ohkubo, T. ^{[2
]}

Hono, K. ^{[1
,2
]}

Ikeda, S. ^{[3
,4
]}

Gan, H. D. ^{[3
]}

Ohno, H. ^{[3
,4
]}

机构：

[1] Univ Tsukuba, Grad Sch Pure & Appl Sci, Tsukuba, Ibaraki 3050047, Japan

[2] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan

[3] Tohoku Univ, Ctr Spintron Integrated Syst, Sendai, Miyagi 9808577, Japan

[4] Tohoku Univ, Lab Nanoelect & Spintron, Elect Commun Res Inst, Sendai, Miyagi 9808577, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2012年 / 111卷 / 04期

关键词：

ROOM-TEMPERATURE;

D O I：

10.1063/1.3688039

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of B concentration on the tunneling magnetoresistance (TMR) of (Co25Fe75)(100-x) B-x/MgO/(Co25Fe75)(100-x)B-x (x = 22 and 33) pseudo-spin-valve (P-SV) magnetic tunnel junctions (MTJs) was investigated. The TMR ratios for optimally annealed MTJs with x = 22 and 33 were 340% and 170%, respectively, at room temperature. High resolution transmission electron microscopy (HRTEM) observation showed a weaker (001) texture in the MgO barrier in the MTJ with x = 33. The bottom electrode was not fully crystallized even with a considerable amount of B in the (Co25Fe75)(67)B-33, while good epitaxy was observed between (001) textured MgO and (Co25Fe75)(78)B-22 electrodes. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3688039]

引用

页数：3

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