New Layered Intergrowths in the Sn-Mo-Se System

被引:25
作者
Beekman, M. [1 ,4 ]
Cogburn, G. [1 ]
Heideman, C. [1 ,5 ]
Rouvimov, S. [2 ]
Zschack, P. [3 ]
Neumann, W. [1 ]
Johnson, D. C. [1 ]
机构
[1] Univ Oregon, Dept Chem, Eugene, OR 97403 USA
[2] Portland State Univ, Dept Phys, Portland, OR 97207 USA
[3] Argonne Natl Lab, Adv Photon Source, Argonne, IL 60439 USA
[4] Oregon Inst Technol, Dept Nat Sci, Klamath Falls, OR USA
[5] Eastern Oregon Univ, Dept Chem & Biochem, La Grande, OR USA
基金
美国国家科学基金会;
关键词
Thermoelectric; intergrowth; semiconductor; synthesis; novel materials; thin film; modulated elemental reactants;
D O I
10.1007/s11664-012-1971-3
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Several new metastable layered intergrowths based on tin monoselenide and molybdenum diselenide, [(SnSe)(1+) ] [MoSe2] , have been prepared by self-assembly from elemental nanolaminate precursors deposited by physical vapor deposition. The thin-film specimens were characterized by laboratory x-ray reflectivity and diffraction, synchrotron x-ray diffraction, electron probe microanalysis, and scanning transmission electron microscopy techniques, all of which indicate the formation of intergrowths with precise layering and well-defined composition. Analysis of in-plane diffraction originating from the individual components yields a structural misfit of = 0.06 and suggests turbostratic misorientation of the individual layers. In contrast to most known [(MX)(1+) ] [TX2] -type chalcogenide compounds, electrical transport data for the [(SnSe)(1+) ](1)[MoSe2](1) composition are consistent with semiconducting behavior.
引用
收藏
页码:1476 / 1480
页数:5
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