Properties of transparent conductive In2O3:Mo thin films deposited by Channel Spark Ablation

被引：32

作者：

Huang, L ^{[1
]}

Li, XF ^{[1
]}

Zhang, Q ^{[1
]}

Miao, WN ^{[1
]}

Zhang, L ^{[1
]}

Yan, XJ ^{[1
]}

Zhang, ZJ ^{[1
]}

Hua, ZY ^{[1
]}

机构：

[1] Fudan Univ, Dept Mat Sci, Shanghai 200433, Peoples R China

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2005年 / 23卷 / 05期

关键词：

D O I：

10.1116/1.1991871

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Molybdenum-doped indium oxide In2O3:Mo (IMO) thin films were deposited on glass substrates by a technique called channel spark ablation. The structure, surface morphology, electrical, and optical properties of these films were investigated by x-ray diffraction, atomic force microscopy (AFM), four-point probe, ultraviolet photoelectron spectroscopy (UPS), Hall analysis, and spectrophotometry. The influence of oxygen pressure on the electrical properties of IMO thin films prepared at T-s=350 degrees C was studied, showing that increasing oxygen pressure changes the resistivity concavely and the carrier concentration convexly. The IMO films as deposited are well crystallized with a preferred orientation of (222) and the surface roughness evaluated in terms of Rrms, Ra, and Rp-v measured by AFM is 0.72, 0.44, and 15.4 nm, respectively. The lowest resistivity and corresponding carrier concentration are 4.8 X 10(-4) Omega cm and 7.1 X 10(20) cm(-3). The typical work function of IMO is 4.6 eV measured by UPS. For all the samples, the average transmittance in the visible region is more than 87%. (c) 2005 American Vacuum Society.

引用

页码：1350 / 1353

页数：4

共 22 条

[1] ELECTRICAL-PROPERTIES AND DEFECT MODEL OF TIN-DOPED INDIUM OXIDE LAYERS [J].

FRANK, G ;

KOSTLIN, H .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 27 (04) :197-206

[2] Chemical and thin-film strategies for new transparent conducting oxides [J].

Freeman, AJ ;

Poeppelmeier, KR ;

Mason, TO ;

Chang, RPH ;

Marks, TJ .

MRS BULLETIN, 2000, 25 (08) :45-51

[3] Non-vacuum and PLD growth of next generation TCO materials [J].

Ginley, D ;

Roy, B ;

Ode, A ;

Warmsingh, C ;

Yoshida, Y ;

Parilla, P ;

Teplin, C ;

Kaydanova, T ;

Miedaner, A ;

Curtis, C ;

Martinson, A ;

Coutts, T ;

Readey, D ;

Hosono, H ;

Perkins, J .

THIN SOLID FILMS, 2003, 445 (02) :193-198

[4] Transparent conducting oxides [J].

Ginley, DS ;

Bright, C .

MRS BULLETIN, 2000, 25 (08) :15-18

[5] Transparent and conducting ITO films:: new developments and applications [J].

Granqvist, CG ;

Hultåker, A .

THIN SOLID FILMS, 2002, 411 (01) :1-5

[6] EVAPORATED SN-DOPED IN2O3 FILMS - BASIC OPTICAL-PROPERTIES AND APPLICATIONS TO ENERGY-EFFICIENT WINDOWS [J].

HAMBERG, I ;

GRANQVIST, CG .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (11) :R123-R159

[7]

Huang Shulai, 2004, Chinese Journal of Semiconductors, V25, P56

[8] Interface formation between NPB and processed indium tin oxide [J].

Le, QT ;

Forsythe, EW ;

Nüesch, F ;

Rothberg, LJ ;

Yan, L ;

Gao, Y .

THIN SOLID FILMS, 2000, 363 (1-2) :42-46

[9] Preparation of molybdenum-doped indium oxide thin films using reactive direct-current magnetron sputtering [J].

Li, XF ;

Miao, WN ;

Zhang, Q ;

Huang, L ;

Zhang, ZJ ;

Hua, ZY .

JOURNAL OF MATERIALS RESEARCH, 2005, 20 (06) :1404-1408

[10]

Meng Y, 2001, THIN SOLID FILMS, V394, P219

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