Electron Quantum Transport in Disordered Graphene

被引：0
作者：
Deretzis, I. [1 ]
Romano, V. [2 ]
La Magna, A. [1 ]
机构：
[1] CNR, IMM, ZI 8 Str 5, I-95121 Catania, Italy
[2] Univ Catania, Dipartimento Matemat & Informat, Via A Doria 6, I-95125 Catania, Italy
来源：
SCIENTIFIC COMPUTING IN ELECTRICAL ENGINEERING (SCEE 2014) | 2016年 / 23卷
关键词：
D O I：
10.1007/978-3-319-30399-4_1
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We discuss the strategies for the calculation of quantum transport in disordered graphene systems from the quasi-one-dimensional to the two-dimensional limit. To this end, we employ real-and momentum-space versions of the non-equilibrium Green's function formalism along with acceleration algorithms that can overcome computational limitations when dealing with two-terminal devices of dimensions that range from the nano-to the micro-scale. We apply this formalism for the case of rectangular graphene samples with a finite concentration of single-vacancy defects and discuss the resulting localization regimes.
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页码：3 / 12
页数：10
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