RF Reliability of Gate Last InGaAs nMOSFETs with High-k Dielectric

被引：0

作者：

Roll, Guntrade ^{[1
]}

Egard, Mikael ^{[1
]}

Johannson, Sofia ^{[1
]}

Ohlsson, Lars ^{[1
]}

Wernersson, Lars-Erik ^{[1
]}

Lind, Erik ^{[1
]}

机构：

[1] Lund Univ, Elect & Informat Technol, S-22100 Lund, Sweden

来源：

2013 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP FINAL REPORT (IRW) | 2013年

关键词：

InGaAs; MOSFET; high-k; RF; reliability;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A complete reliability study of the high-frequency characteristics for nMOSFETs on InGaAs channel with Al2O3/HfO2 gate dielectric is presented. DC gate voltage stress causes an increase in the transconductance frequency dispersion. Stress induced border traps degrade the maximum DC-transconductance, but do not react at high frequencies. The main degradation characteristics of the high-frequency measurements can be modeled by the threshold voltage related transconductance shift. The maximum of the cut-off frequency is shifted with stress to higher or lower gate biases, but not decreased.

引用

页码：38 / 41

页数：4

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