Surface photovoltage spectroscopy characterization of a GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structure

被引：5
作者：
Cheng, YT
Huang, YS [1 ]
Lin, DY
Tiong, KK
Pollak, FH
Evans, KR
机构：
[1] Natl Taiwan Univ Sci & Technol, Dept Elect Engn, Taipei 106, Taiwan
[2] Nan Kai Coll Technol & Commerce, Dept Elect Engn, Tsao Tun 202, Taiwan
[3] Natl Taiwan Ocean Univ, Dept Elect Engn, Chilung 202, Taiwan
[4] CUNY Brooklyn Coll, Dept Phys, Brooklyn, NY 11210 USA
[5] CUNY Brooklyn Coll, New York State Ctr Adv Technol Ultrafast Photon M, Brooklyn, NY 11210 USA
[6] Quantum Epitaxial Designs Inc, Bethlehem, PA 18015 USA
来源：
APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 07期
关键词：
D O I：
10.1063/1.1392974
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Using room-temperature surface photovoltage spectroscopy (SPS), we have characterized a GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (pHEMT) structure. Signals have been observed from every region of the sample. From a line shape fit to the normalized first derivative of the surface photovoltage signal with respect to photon energy, the two-dimensional electron gas density (N-s) was obtained and found to be in good agreement with Hall measurement. The Al composition and the properties of the GaAs/GaAlAs superlattice buffer layer also were obtained from the SPS spectrum. The results demonstrate the considerable potential of SPS for the contactless and nondestructive characterization of pHEMT structures at room temperature. (C) 2001 American Institute of Physics.
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收藏
页码：949 / 951
页数：3
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