Solution-Processable Zinc Oxide for the Polymer Solar Cell Based on P3HT:PCBM

被引：19

作者：

Kim, Jun Young ^{[1
]}

Noh, Seunguk ^{[1
]}

Lee, Donggu ^{[1
]}

Nayak, Pradipta K. ^{[2
]}

Hong, Yongtaek ^{[1
]}

Lee, Changhee ^{[1
]}

机构：

[1] Seoul Natl Univ, Sch Elect Engn & Comp Sci, Interuniv Semicond Res Ctr, Seoul 151744, South Korea

[2] Univ Nova Lisboa, Dept Ciencia Mat, CENIMAT I3N, Fac Ciencias & Tecnol, P-2829516 Caparica, Portugal

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2011年 / 11卷 / 07期

关键词：

Polymer Solar Cell; ZnO; Solution Process; Sol-Gel; Electron Injection Layer; DOPED ZNO FILMS; PHOTOVOLTAIC CELLS; BUFFER LAYER; FULLERENE; DEVICE;

D O I：

10.1166/jnn.2011.4511

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The device performance of polymer solar cells with zinc oxide (ZnO) nanoparticles inserted as an electron injection layer between the poly(3-hexylthiopene) (P3HT):phenyl-C60-butyric acid methyl ester (PCBM) active layer and the Al electrode was studied. The polymer solar cell consists of molybdenum-oxide (MoO(3)) as a hole injection layer, P3HT:PCBM bulk heterojunction as an active layer, and ZnO NPs as an electron injection layer. The ZnO layer was formed from a precursor solution on the top part of the P3HT:PCBM film (1:0.8 weight ratio) via sol-gel spin-coating, and was annealed at a low temperature (150 degrees C). The crystallinity, the atomic ratio of Zn and 0, the absorption spectra, and the surface morphology of the ZnO thin films were studied. The device with a ZnO layer showed 9-11% higher J(SC) and 8-9% higher PCE compared to the devices without a ZnO layer. These improved device properties are attributed to the efficient electron extraction and the decreased reflectivity owing to the use of a ZnO layer.

引用

页码：5995 / 6000

页数：6

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