Transformation of self-assembled InAs/InP quantum dots into quantum rings without capping

被引：33

作者：

Sormunen, J ^{[1
]}

Riikonen, J ^{[1
]}

Mattila, M ^{[1
]}

Tiilikainen, J ^{[1
]}

Sopanen, M ^{[1
]}

Lipsanen, H ^{[1
]}

机构：

[1] Helsinki Univ Technol, Optoelect Lab, Micronova, FIN-02015 Helsinki, Finland

来源：

NANO LETTERS | 2005年 / 5卷 / 08期

关键词：

D O I：

10.1021/nl050646v

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Transformation of self-assembled InAs quantum dots (ODs) on InP(100) into quantum rings (QRs) is studied. In contrast to the typical approach to III-V semiconductor QR growth, the QDs are not capped to form rings. Atomic force micrographs reveal a drastic change from InAs ON into rings after a growth interruption in tertiarybutylphosphine ambient. Strain energy relief in the InAs CID is discussed and a mechanism for dot-to-ring transformation by As/P exhange reactions is proposed.

引用

页码：1541 / 1543

页数：3

共 18 条

[1] Wetting droplet instability and quantum ring formation [J].

Blossey, R ;

Lorke, A .

PHYSICAL REVIEW E, 2002, 65 (02)

[2] Self-assembled SiGe quantum rings grown on Si(001) by molecular beam epitaxy [J].

Cui, J ;

He, Q ;

Jiang, XM ;

Fan, YL ;

Yang, XJ ;

Xue, F ;

Jiang, ZM .

APPLIED PHYSICS LETTERS, 2003, 83 (14) :2907-2909

[3] Intermixing and shape changes during the formation of InAs self-assembled quantum dots [J].

García, JM ;

MedeirosRibeiro, G ;

Schmidt, K ;

Ngo, T ;

Feng, JL ;

Lorke, A ;

Kotthaus, J ;

Petroff, PM .

APPLIED PHYSICS LETTERS, 1997, 71 (14) :2014-2016

[4] TRANSMISSION ELECTRON-MICROSCOPY INVESTIGATION OF THE MORPHOLOGY OF INP STRANSKI-KRASTANOW ISLANDS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION [J].

GEORGSSON, K ;

CARLSSON, N ;

SAMUELSON, L ;

SEIFERT, W ;

WALLENBERG, LR .

APPLIED PHYSICS LETTERS, 1995, 67 (20) :2981-2982

[5] Role of group V exchange on the shape and size of InAs/InP self-assembled nanostructures [J].

Gutiérrez, HR ;

Cotta, MA ;

Bortoleto, JRR ;

de Carvalho, MMG .

JOURNAL OF APPLIED PHYSICS, 2002, 92 (12) :7523-7526

[6] Calculations of the electronic structure of strained InAs quantum dots in InP [J].

Holm, M ;

Pistol, ME ;

Pryor, C .

JOURNAL OF APPLIED PHYSICS, 2002, 92 (02) :932-936

[7] Formation and optical properties of CdTe self-assembled quantum rings with electronic states embedded in ZnTe barriers [J].

Kim, TW ;

Lee, EH ;

Lee, KH ;

Kim, JS ;

Park, HL .

APPLIED PHYSICS LETTERS, 2004, 84 (04) :595-597

[8] Self-assembled growth of GaSb type II quantum ring structures [J].

Kobayashi, SE ;

Jiang, C ;

Kawazu, T ;

Sakaki, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2004, 43 (5B) :L662-L664

[9] INSITU INTERFACE CONTROL OF PSEUDOMORPHIC INAS/INP QUANTUM-WELL STRUCTURE GROWTH BY SURFACE PHOTOABSORPTION [J].

KOBAYASHI, Y ;

KOBAYASHI, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1992, 31 (12A) :3988-3994

[10] III-V semiconductor nano-rings [J].

Lee, BC ;

Voskoboynikov, O ;

Lee, CP .

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 24 (1-2) :87-91

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