Improved electrical properties on the anodic oxide InP interface for MOS structures

被引：10

作者：

Sumathi, RR ^{[1
]}

Dharmarasu, N ^{[1
]}

Arulkumaran, S ^{[1
]}

Jayavel, P ^{[1
]}

Kumar, J ^{[1
]}

机构：

[1] Anna Univ, Ctr Crystal Growth, Chennai 600025, India

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1998年 / 27卷 / 12期

关键词：

BCA; indium phosphide; metal oxide semiconductor (MOS); polishing; surface states;

D O I：

10.1007/s11664-998-0097-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The interface properties of the anodic oxide/n-type (111) InP metal oxide semiconductor (MOS) structures significantly improved while using the polishing agent HBr:K2Cr2O7:H2O (BCA). Annealing at 250 degrees C dehydrates the grown oxides and has a strong effect on the surface potential. Composition of the oxides analyzed using x-ray photoelectron spectroscopy showed that the oxides are composed of In2O3, InPO3, and InPO4. MOS structures fabricated on BCA polished substrates show a lower surface state density of 6 x 10(10) cm(-2) eV(-1) when compared to the substrates polished with bromine-methanol (8 x 10(10) cm(-2) eV(-1)).

引用

页码：1358 / 1361

页数：4

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