Improved electrical properties on the anodic oxide InP interface for MOS structures

被引：10
作者：
Sumathi, RR [1 ]
Dharmarasu, N [1 ]
Arulkumaran, S [1 ]
Jayavel, P [1 ]
Kumar, J [1 ]
机构：
[1] Anna Univ, Ctr Crystal Growth, Chennai 600025, India
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1998年 / 27卷 / 12期
关键词：
BCA; indium phosphide; metal oxide semiconductor (MOS); polishing; surface states;
D O I：
10.1007/s11664-998-0097-0
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The interface properties of the anodic oxide/n-type (111) InP metal oxide semiconductor (MOS) structures significantly improved while using the polishing agent HBr:K2Cr2O7:H2O (BCA). Annealing at 250 degrees C dehydrates the grown oxides and has a strong effect on the surface potential. Composition of the oxides analyzed using x-ray photoelectron spectroscopy showed that the oxides are composed of In2O3, InPO3, and InPO4. MOS structures fabricated on BCA polished substrates show a lower surface state density of 6 x 10(10) cm(-2) eV(-1) when compared to the substrates polished with bromine-methanol (8 x 10(10) cm(-2) eV(-1)).
引用
收藏
页码：1358 / 1361
页数：4
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