Zinc-blende GaN quantum dots grown by vapor-liquid-solid condensation

被引：10

作者：

Schupp, T. ^{[1
]}

Meisch, T. ^{[2
]}

Neuschl, B. ^{[2
]}

Feneberg, M. ^{[2
]}

Thonke, K. ^{[2
]}

Lischka, K. ^{[1
]}

As, D. J. ^{[2
]}

机构：

[1] Univ Gesamthsch Paderborn, Dept Phys, D-33095 Paderborn, Germany

[2] Univ Ulm, Inst Quantenmat, Grp Halbleiterphys, D-89069 Ulm, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2011年 / 323卷 / 01期

关键词：

Atomic force microscopy; Growth models; Nanostructures; Reflection high energy electron diffraction; Molecular beam epitaxy; Nitrides; TRANSITION;

D O I：

10.1016/j.jcrysgro.2010.12.043

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Vapor-liquid-solid condensation was utilized to fabricate zinc-blende GaN quantum dots on 3C-AlN (0 0 1) in a molecular beam epitaxy system. By adjustment of deposition parameters and nitridation procedure the density of the quantum dots was controllable in the range of 5 x 10(8)-5 x 10(12) cm(-2). The quantum dots in the range of 8 x 10(10)-5 x 10(12) cm(-2) have shown strong optical activity in photo-luminescence spectroscopy. Furthermore we have demonstrated that vapor-liquid-solid condensation is suitable to tune the emission energy of zinc-blende GaN quantum dots in the range of 3.55-3.81 eV. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：286 / 289

页数：4

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