Design and Simulation of a-Si:H/PbS Colloidal Quantum Dots Monolithic Tandem Solar Cell for 12% Efficiency

被引:31
作者
Kashyap, Savita [1 ]
Pandey, Rahul [1 ]
Madan, Jaya [1 ]
Sharma, Rajnish [1 ]
机构
[1] Chitkara Univ, Chitkara Univ Inst Engn & Technol, VLSI Ctr Excellence, Rajpura 140401, Punjab, India
来源
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2020年 / 217卷 / 20期
关键词
a-Si; H; monolithic tandem; PbS colloidal quantum dots; solar cells; thin-films; DEFECT-POOL MODEL; NUMERICAL SIMULATIONS; RECOMBINATION; PERFORMANCE; ENHANCEMENT; GRAPHENE; SINGLE; LIMIT;
D O I
10.1002/pssa.202000252
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Tandem solar cells (TSC) is the most promising photovoltaic technology, as it efficiently overcomes the thermalization and nonabsorption losses. In this context, thin-film/colloidal quantum dot (CQD)-based 2-terminal monolithic TSCs are designed using a-Si:H of wide bandgap (1.7 eV) as the top cell and PbS CQD of narrow bandgap (1.2 eV) as the bottom cell. Initially, top and bottom subcells are designed and calibrated to have state-of-the-art power conversion efficiencies (PCE) of 6.86% and 9.38%, respectively. Afterward, the thicknesses of the inverted bottom cell are optimized as 200 nm so as to obtain 8.34% efficiency. The standalone condition reflects current density (J(SC))/open-circuit voltage (V-OC) of 9.97 mA cm(-2)and 0.91 V in the top cell and 21.28 mA cm(-2)/0.63 V in the bottom cell. Further, both subcells are evaluated for tandem configuration with ITO-based interlayer to provide the current matching conditions. In the proposed tandem design, the thickness of the absorber layers is optimized to achieve the highestJ(SC), which is indeed limited by the top cell, due to a lowerJ(SC)value of 10.61 mA cm(-2)in standalone conditions. Optimized tandem design with 200 nm/150 nm-thick absorber layer-based top/bottom subcell results inJ(SC)of 10.52 mA cm(-2),V(OC)of 1.59 V, FF of 71.65%, and PCE of 12.02%.
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页数:13
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