Analysis of transverse mode formation in quasi-three-level microchip lasers

被引：2

作者：

Gong, WP ^{[1
]}

Gong, ML ^{[1
]}

Liu, Q ^{[1
]}

Lu, FY ^{[1
]}

机构：

[1] Tsing Hua Univ, Ctr Photon & Elect, Dept Precis Instruments & Mechanol, State Key Lab Tribol, Beijing 100084, Peoples R China

来源：

OPTICAL AND QUANTUM ELECTRONICS | 2005年 / 37卷 / 12期

关键词：

gain guiding; microchip lasers; mode formation; thermal guiding; quasi-three-level; Yb : YAG;

D O I：

10.1007/s11082-005-3024-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of gain guiding and thermal guiding on the cavity mode formation for quasi-three-level microchip lasers are investigated. A parameter describing the dominant guiding mechanisms at the lasing threshold is defined. Paraxial wave propagation equation for the field envelope in the gain medium with thermal-induced refractive index profile and gain profile is derived. A comparison between the calculated results and those of experiments reveals that this model is quite reasonable and applicable not only to the Yb:YAG microchip laser, but also to other quasi-three-level microchip lasers.

引用

页码：1109 / 1120

页数：12

共 20 条

[1] CW theory of quasi-three level end-pumped laser oscillators [J].