The preferential formation site of dislocations in InAs/GaAs quantum dots

被引：4

作者：

Zhou, Shuai ^{[1
]}

Liu, Yumin ^{[1
]}

Wang, Donglin ^{[1
]}

Xin, Xia ^{[1
]}

Cao, Gui ^{[1
]}

Lu, Pengfei ^{[1
]}

Yu, Zhongyuan ^{[1
]}

机构：

[1] Beijing Univ Posts & Telecommun, Inst Informat Photon & Opt Commun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2012年 / 51卷 / 01期

基金：

中国国家自然科学基金; 国家高技术研究发展计划(863计划);

关键词：

InAs/GaAs quantum dots; Dislocation; Position dependent; Aspect ratio; LASERS; ISLANDS; GROWTH; MISFIT;

D O I：

10.1016/j.spmi.2011.10.004

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In this paper, taking elastic anisotropy into consideration, we use a dislocation position dependent model to calculate the preferential formation site of the pure edge and 60 degrees mixed dislocation segment in different shaped InAs/GaAs quantum dots (QDs). From the result, it is clear that for the pure edge dislocations the most energy favorable position is always the base center of the quantum dots. While as to the 60 degrees mixed dislocations, the positions near to the edge of the quantum dot base are the energy favorable area and the exact position is changed with different aspect ratio of the quantum dot. (C) 2011 Published by Elsevier Ltd.

引用

页码：53 / 61

页数：9

共 25 条

[1] BREAKDOWN OF CONTINUUM ELASTICITY THEORY IN THE LIMIT OF MONATOMIC FILMS [J].