Characterization of copper-manganese-oxide thin films deposited by dip-coating

被引：50

作者：

Bayon, Rocio ^{[1
]}

Vicente, Gema San ^{[1
]}

Maffiotte, Cesar ^{[2
]}

Morales, Angel ^{[1
]}

机构：

[1] CIEMAT, Unidad Concentrac Solar Plataforma Solar Almeria, Dept Energia, E-28040 Madrid, Spain

[2] CIEMAT, Unidad Microscopia & Anal Superficie, Dept Tecnol, E-28040 Madrid, Spain

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2008年 / 92卷 / 10期

关键词：

dip coating; copper-manganese-oxide; XPS analysis; optical properties; electrical conductivity;

D O I：

10.1016/j.solmat.2008.04.011

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Thin films of copper-manganese oxide were prepared by dip-coating method and annealed between 400 and 500 degrees C for periods of time from 15 to 90 min. The influence of both annealing time and temperature on film composition and optical properties was studied. X-ray photoelectron spectroscopy (XPS) measurements indicated that the initially formed mixture of copper an manganese oxides leads to Cu1.5Mn1.5O4 through a solid state red-ox reaction. This reaction takes place at temperatures higher than 450 degrees C and the full conversion of single oxides into CU1.5Mn1.5O4 needs at least 60 min to proceed. In relation to the optical properties we found that low solar absorptance (alpha(s)similar to 0.6) can be associated with the mixture of single oxides whereas the formation Of Cu1.5Mn1.5O4 dramatically increases solar absorptance values (alpha(s)similar to 0.9). The presence of Mn3+ and Mn4+ in octahedral sites and Cu+ and Cu2+ in tetrahedral sites is also evidenced by XPS and can explain the high conductivity of films where Cu1.5Mn1.5O4 is present. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：1211 / 1216

页数：6

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