The critical growth velocity for planar-to-faceted interfaces transformation in SiGe crystals

被引：11
作者：
Yang, Xinbo [1 ,2 ]
Fujiwara, K. [1 ]
Abrosimov, N. V. [2 ]
Gotoh, R. [1 ]
Nozawa, J. [1 ]
Koizumi, H. [1 ]
Kwasniewski, A. [3 ]
Uda, S. [1 ]
机构：
[1] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan
[2] Australian Natl Univ, Res Sch Engn, Coll Engn & Comp Sci, Canberra, ACT 0200, Australia
[3] Leibniz Inst Crystal Growth IKZ, D-12489 Berlin, Germany
来源：
APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 14期
基金：
日本学术振兴会;
关键词：
STRANSKI-KRASTANOW ISLANDS; SINGLE-CRYSTALS; MELT INTERFACE; SI1-XGEX; SILICON; EQUILIBRIUM;
D O I：
10.1063/1.3698336
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Crystal-melt interface morphological transformation of differently oriented SiGe crystals with different Ge concentrations was observed, and the effect of Ge concentration on critical growth velocity (V-c) for the interface morphological transformation was investigated. A planar-to-faceted morphological transformation for the < 110 >, < 112 >, and < 100 > interfaces was observed. V-c for planar-to-faceted transformation of the < 110 >, < 112 >, and < 100 > interfaces decreases nonlinearly with increasing Ge concentration. SiGe faceted interfaces can be attributed to the fact that the perturbation induced in a planar interface was amplified when the constitutional undercooled zone was formed at high growth velocities. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3698336]
引用
收藏
页数：4
相关论文
共 21 条
  • [1] Czochralski growth of Si- and Ge-rich SiGe single crystals
    Abrosimov, NV
    Rossolenko, SN
    Thieme, W
    Gerhardt, A
    Schroder, W
    [J]. JOURNAL OF CRYSTAL GROWTH, 1997, 174 (1-4) : 182 - 186
  • [2] Single crystal growth of Si1-xGex by the Czochralski technique
    Abrosimov, NV
    Rossolenko, SN
    Alex, V
    Gerhardt, A
    Schroder, W
    [J]. JOURNAL OF CRYSTAL GROWTH, 1996, 166 (1-4) : 657 - 662
  • [3] Lateral photovoltage scanning (LPS) method for the visualization of the solid-liquid interface of Si1-xGex single crystals
    Abrosimov, NV
    Lüdge, A
    Riemann, H
    Schröder, W
    [J]. JOURNAL OF CRYSTAL GROWTH, 2002, 237 : 356 - 360
  • [4] Structural properties of directionally grown polycrystalline SiGe for solar cells
    Fujiwara, K
    Pan, W
    Usami, N
    Sawada, K
    Nomura, A
    Ujihara, T
    Shishido, T
    Nakajima, K
    [J]. JOURNAL OF CRYSTAL GROWTH, 2005, 275 (3-4) : 467 - 473
  • [5] Morphological transformation of a crystal-melt interface during unidirectional growth of silicon
    Fujiwara, K.
    Gotoh, R.
    Yang, X. B.
    Koizumi, H.
    Nozawa, J.
    Uda, S.
    [J]. ACTA MATERIALIA, 2011, 59 (11) : 4700 - 4708
  • [6] Formation mechanism of cellular structures during unidirectional growth of binary semiconductor Si-rich SiGe materials
    Gotoh, Raira
    Fujiwara, Kozo
    Yang, Xinbo
    Koizumi, Haruhiko
    Nozawa, Jun
    Uda, Satoshi
    [J]. APPLIED PHYSICS LETTERS, 2012, 100 (02)
  • [7] Equilibrium shape of SiGe Stranski-Krastanow islands on silicon grown by liquid phase epitaxy
    Hanke, M
    Schmidbauer, M
    Köhler, R
    Syrowatka, F
    Gerlitzke, AK
    Boeck, T
    [J]. APPLIED PHYSICS LETTERS, 2004, 84 (25) : 5228 - 5230
  • [8] Unidirectional self-assembling of SiGe Stranski-Krastanow islands on Si(113)
    Hanke, M
    Boeck, T
    Gerlitzke, AK
    Syrowatka, F
    Heyroth, F
    [J]. APPLIED PHYSICS LETTERS, 2005, 86 (22) : 1 - 3
  • [9] Microscopic studies of metal-induced lateral crystallization in SiGe
    Itakura, Masaru
    Masumori, Shunji
    Kuwano, Noriyuki
    Kanno, Hiroshi
    Sadoh, Taizoh
    Miyao, Masanobu
    [J]. APPLIED PHYSICS LETTERS, 2010, 96 (18)
  • [10] POLYCRYSTALLINE WETTING LAYER ON CZOCHRALSKI SINGLE-CRYSTALS OF STRONGLY SEGREGATING SYSTEMS
    KURTEN, M
    SCHILZ, J
    [J]. JOURNAL OF CRYSTAL GROWTH, 1994, 141 (3-4) : 473 - 475
123