Subpicosecond luminescence spectroscopy of exciton localization in InxGa1-xN films -: art. no. 151120

被引：10

作者：

Kanemitsu, Y ^{[1
]}

Tomita, K

Inouye, H

机构：

[1] Nara Inst Sci & Technol, Grad Sch Mat Sci, Nara 6300192, Japan

[2] Kyoto Univ, Inst Chem Res, Int Res Ctr Elements Sci, Kyoto 6110011, Japan

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 15期

关键词：

D O I：

10.1063/1.2103407

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the exciton localization dynamics in InxGa1-xN epitaxial films with different In compositions (x=0.02, 0.05, and 0.09) by means of optical Kerr-gate time-resolved photoluminescence (PL) spectral measurements. By changing excitation wavelength of 150 fs laser pulses, InxGa1-xN films are resonantly excited around their exciton energies at 6 K. Under the resonant excitation, the PL dynamics is sensitive to the In composition of the sample and the excitation laser intensity. In the low In composition samples, the formation time of radiative excitons at localized states is 5-10 ps. In the high In composition samples, the gradual redshift of the PL peak energy is observed within several tens of picoseconds. The radiative recombination processes of excitons are discussed. (C) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3