Relaxation Behavior of Zr Substituted CaCu3Ti4O12 Ceramics

被引：1
|
作者：
Yu, Hongtao [1 ]
Zhang, Wenbo [1 ]
Liu, Jingsong [1 ]
Liu, Hanxing [2 ]
机构：
[1] SW Univ Sci & Technol, State Key Lab Cultivat Base Nonmet Composites & F, Mianyang 621010, Peoples R China
[2] Wuhan Univ Technol, State Key Lab Adv Technol, Mat Synth & Proc, Wuhan 430070, Peoples R China
来源：
FUNCTIONAL AND ELECTRONIC MATERIALS | 2011年 / 687卷
关键词：
CaCu3Ti4O12 (CCTO); Zr; Relaxation behavior; Impedance spectra; HIGH-DIELECTRIC-CONSTANT; BOUNDARY;
D O I：
10.4028/www.scientific.net/MSF.687.375
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The dielectric properties of Zr substituted CaCu3Ti4O12 ceramics have been investigated in detail. Grain size decreases with Zr content increasing. The hetero-electrical microstructures of prepared samples have been confirmed by the impedance spectra. The dielectric loss has been improved by Zr doping because of the enhancement of grain boundary resistivity. A Debye-like boundary relaxation behavior has been observed in the temperature range of 220-600K. As Zr content increases, the relaxation time increases due to the higher grain boundary concentration. This work has provided an additional proof for the origin of giant dielectric response in CaCu3Ti4O12 ceramics.
引用
收藏
页码：375 / +
页数：2
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