Hall effect of FeTe and Fe(Se1-xTex) thin films

被引：17
作者：
Tsukada, I. [1 ,3 ]
Hanawa, M. [1 ,3 ]
Komiya, Seiki [1 ,3 ]
Ichinose, A. [1 ,3 ]
Akiike, T. [2 ,3 ]
Imai, Y. [2 ,3 ]
Maeda, A. [2 ,3 ]
机构：
[1] Cent Res Inst Elect Power Ind, Yokosuka, Kanagawa 2400196, Japan
[2] Univ Tokyo, Dept Basic Sci, Meguro Ku, Tokyo 1538902, Japan
[3] Japan Sci & Technol Agcy, Chiyoda Ku, Tokyo 1020075, Japan
来源：
PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS | 2011年 / 471卷 / 21-22期
关键词：
Iron chalcogenide superconductor; FeTe; Hall effect; Two-band model; SUPERCONDUCTIVITY;
D O I：
10.1016/j.physc.2011.05.012
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The Hall effect is investigated in thin-film samples of iron-chalcogenide superconductors in detail. The Hall coefficient (R-H) of FeTe and Fe(Se1-xTex) exhibits a similar positive value around 300 K, indicating that the high-temperature normal state is dominated by hole-channel transport. FeTe exhibits a sign reversal from positive to negative across the transition to the low-temperature antiferromagnetic state, indicating the occurrence of drastic reconstruction in the band structure. The mobility analysis using the carrier density theoretically calculated reveals that the mobility of holes is strongly suppressed to zero, and hence the electric transport looks to be dominated by electrons. The Se substitution to Te suppresses the antiferromagnetic long-range order and induces superconductivity instead. The similar mobility analysis for Fe(Se0.4Te0.6) and Fe(Se0.5Te0.5) thin films shows that the mobility of electrons increases with decreasing temperature even in the paramagnetic state, and keeps sufficiently high values down to the superconducting transition temperature. From the comparison between FeTe and Fe(Se1-xTex), it is suggested that the coexistence of 'itinerant' carriers both in electron and hole channels is indispensable for the occurrence of superconductivity. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：625 / 629
页数：5
相关论文
共 50 条
[11]   Hall effect in Al-W thin films [J].
Ivkov, J ;
Radic, N ;
Tonejc, A .
SOLID STATE COMMUNICATIONS, 2004, 129 (06) :369-373
[12]   Hall effect in unidirectionally twinned YBaCuO thin films [J].
Casaca, A ;
Bonfait, G ;
Dubourdieu, C ;
Weiss, F ;
Sénateur, JP .
PHYSICA B, 2000, 284 :1013-1014
[13]   Analysis of FeySe1-xTex thin films grown by radio frequency sputtering [J].
Speller, S. C. ;
Aksoy, C. ;
Saydam, M. ;
Taylor, H. ;
Burnell, G. ;
Boothroyd, A. T. ;
Grovenor, C. R. M. .
SUPERCONDUCTOR SCIENCE & TECHNOLOGY, 2011, 24 (07)
[14]   Hall effect in permalloy based thin films and magnetic multilayers [J].
Volmer, T ;
Neamtu, J .
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2003, 5 (04) :951-957
[15]   In situ Hall effect and conductivity measurements of ITO thin films [J].
Hohmann, Mareike V. ;
Wachau, Andre ;
Klein, Andreas .
SOLID STATE IONICS, 2014, 262 :636-639
[16]   Planar Hall effect in thin magnetic films with domain structure [J].
Antonov, I ;
Vatskitchev, L ;
Vatskitcheva, M .
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1997, 169 (1-2) :25-30
[17]   Electrically Tunable Anomalous Hall Effect in Pt Thin Films [J].
Shimizu, Sunao ;
Takahashi, Kei S. ;
Hatano, Takafumi ;
Kawasaki, Masashi ;
Tokura, Yoshinori ;
Iwasa, Yoshihiro .
PHYSICAL REVIEW LETTERS, 2013, 111 (21)
[18]   Effect of thickness on the superconducting properties of the thin films of FeTe0.55Se0.45 deposited on YSZ substrates using Pulsed laser deposition (PLD) technique [J].
Chauhan, Himanshu ;
Miglani, Shivam Kumar ;
Mitra, A. ;
Varma, G. D. .
PHYSICA SCRIPTA, 2023, 98 (06)
[19]   Magneto-optical characterizations of FeTe0.5Se0.5 thin films with critical current density over 1 MA cm-2 [J].
Sun, Yue ;
Tsuchiya, Yuji ;
Pyon, Sunseng ;
Tamegai, Tsuyoshi ;
Zhang, Cheng ;
Ozaki, Toshinori ;
Li, Qiang .
SUPERCONDUCTOR SCIENCE & TECHNOLOGY, 2015, 28 (01)
[20]   Giant planar Hall effect in epitaxial Fe3O4 thin films and its temperature dependence [J].
Fernandez-Pacheco, A. ;
De Teresa, J. M. ;
Orna, J. ;
Morellon, L. ;
Algarabel, P. A. ;
Pardo, J. A. ;
Ibarra, M. R. ;
Magen, C. ;
Snoeck, E. .
PHYSICAL REVIEW B, 2008, 78 (21)
12345