Separation of Interface Traps and Oxide Charge in Ionization Damaged Silicon Bipolar Transistors Based on Experimental Observation

被引：10

作者：

Li, Xingji ^{[1
]}

Liu, Chaoming ^{[1
]}

Yang, Jianqun ^{[1
]}

机构：

[1] Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R China

来源：

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 2015年 / 15卷 / 02期

基金：

中国博士后科学基金;

关键词：

Bipolar junction transistors; radiation damage; radiation defect; DLTS;

D O I：

10.1109/TDMR.2015.2423316

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An experimental concept of separating oxide-trapped charge and interface traps in silicon bipolar junction transistors (BJTs) irradiated by Co60 gamma ray is demonstrated. This concept is based on deep-level transient spectroscopy (DLTS) measurements with various filling pulsewidths. The characteristics of oxide-trapped charge and interface traps in bipolar transistors can be obtained by DLTS. The oxide-trapped charge shows positive and negative signals in the collector of NPN and PNP BJTs in DLTS signals, respectively. Unlike the oxide-trapped charge, the interface traps give positive signals in the same region of NPN and PNP BJTs.

引用

页码：258 / 260

页数：3