Separation of Interface Traps and Oxide Charge in Ionization Damaged Silicon Bipolar Transistors Based on Experimental Observation

被引：10
|
作者：
Li, Xingji [1 ]
Liu, Chaoming [1 ]
Yang, Jianqun [1 ]
机构：
[1] Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R China
来源：
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 2015年 / 15卷 / 02期
基金：
中国博士后科学基金;
关键词：
Bipolar junction transistors; radiation damage; radiation defect; DLTS;
D O I：
10.1109/TDMR.2015.2423316
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An experimental concept of separating oxide-trapped charge and interface traps in silicon bipolar junction transistors (BJTs) irradiated by Co60 gamma ray is demonstrated. This concept is based on deep-level transient spectroscopy (DLTS) measurements with various filling pulsewidths. The characteristics of oxide-trapped charge and interface traps in bipolar transistors can be obtained by DLTS. The oxide-trapped charge shows positive and negative signals in the collector of NPN and PNP BJTs in DLTS signals, respectively. Unlike the oxide-trapped charge, the interface traps give positive signals in the same region of NPN and PNP BJTs.
引用
收藏
页码：258 / 260
页数：3
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