Effects of absorbed group-V atoms on the size distribution and optical properties of InAsP quantum dots fabricated by the droplet hetero-epitaxy

被引：7

作者：

Fuchi, S. ^{[1
]}

Miyake, S. ^{[1
]}

Kawamura, S. ^{[1
]}

Lee, W. S. ^{[1
]}

Ujihara, T. ^{[1
]}

Takeda, Y. ^{[1
]}

机构：

[1] Nagoya Univ, Dept Crystalline Mat Sci, Grad Sch Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2008年 / 310卷 / 7-9期

关键词：

low dimensional structures; nanostructures; organometallic vapor phase epitaxy; semiconducting III-V materials;

D O I：

10.1016/j.jcrysgro.2007.11.139

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We fabricated InAsP quantum dots on GaInP lattice-matched to GaAs (0 0 1) using three types of growth sequences by the droplet heteroepitaxy. By changing group-V ambient before In droplets formation, we investigated the effects of absorbed group-V atoms on the lateral size, height, density, and luminescence intensity of InAsP quantum dots. By supplying tertiarybutylphosphine and tertiarybutylarsine mixed gases before In droplets formation, the lateral size and height of dots decreased, and the luminescence intensity increased by 550 times. It was revealed that the group-V ambient before In droplets formation was very important for the lateral size, height, and the luminescence intensity. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：2239 / 2243

页数：5

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