Growth of nominally undoped p-type ZnO on Si by pulsed-laser deposition -: art. no. 122103

被引：63
|
作者：
Oh, MS [1 ]
Kim, SH [1 ]
Seong, TY [1 ]
机构：
[1] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea
来源：
APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 12期
关键词：
D O I：
10.1063/1.2056576
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on the growth of nominally undoped p-type ZnO films on Si(111) substrates by pulsed-laser deposition. Hall effect measurements show that the undoped ZnO films change from n-type to p-type material when the oxygen pressure changes from 6x10(-5) to 3x10(-4) Torr during growth. Ti/Au contacts produce ohmic behavior to n-type ZnO (similar to 10(17) cm(-3)), but leaky Schottky behavior to p-type ZnO (similar to 10(18) cm(-3)). Electrical and photoluminescence results indicate that native defects, such as oxygen and zinc vacancies, could play an important role in determining the conductivity of these nominally undoped ZnO films. (c) 2005 American Institute of Physics.
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页码：1 / 3
页数：3
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