Integrated RF interference suppression filter design using bond-wire inductors

被引：24

作者：

Khatri, Himanshu ^{[1
]}

Gudem, Prasad S. ^{[2
]}

Larson, Lawrence E. ^{[1
]}

机构：

[1] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA

[2] Qualcomm Inc, San Diego, CA 92121 USA

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2008年 / 56卷 / 05期

关键词：

Bandpass filter (BPF); bond wires; CMOS; interference suppression; mutual inductance; wideband code division multiple access (WCDMA);

D O I：

10.1109/TMTT.2008.921297

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Design techniques are presented for the realization of high-performance integrated interference suppression filters using bond-wire inductors. A new configuration is proposed for mitigating the impact of mutual coupling between the bond wires. A differential low-noise amplifier with an integrated on-chip passive interference suppression filter is designed at 2.1 GHz in a 0.18-mu m CMOS process, and achieves a transmit leakage suppression of 10 dB at 190-MHz offset. The differential filter uses metal-insulator-metal capacitors and bond-wire inductors and occupies only 0.22 mm(2). The cascaded system achieves a measured gain of 9.5 dB with a 1.6-dB noise figure and -5 dBm out-of-band IIP3 and consumes 11 mA from a 2-V supply.

引用

页码：1024 / 1034

页数：11

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