Coexistence of nonvolatile unipolar and volatile threshold resistive switching in the Pt/LaMnO3/Pt heterostructures

被引:6
|
作者
Yin, Yanfeng [1 ]
Kang, Chaoyang [1 ]
Jia, Caihong [1 ]
Zhang, Weifeng [1 ]
机构
[1] Hunan Univ, Kaifeng, Peoples R China
基金
美国国家科学基金会;
关键词
Unipolar resistance switching; Threshold resistance switching; Oxygen vacancy; Insulator-to-metal transition; Oxide heterostructure; MEMORY;
D O I
10.1016/j.cap.2021.07.009
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Coexistence of nonvolatile unipolar and volatile threshold resistive switching is observed in the Pt/LaMnO3(LMO)/Pt hetemstructures. The nonvolatile unipolar memory is achieved by applying a negative bias, while the volatile threshold resistive switching is obtained under a positive bias. Additionally, the pristine low resistance state (LRS) could be switched to high resistance state (HRS) by the positive voltage sweeping, which is attributed to the conduction mechanism of Schottky emission. Subsequently, the insulator-to-metal transition in the LMO film due to formation of ferromagnetic metallic phase domain contributes to the volatile threshold resistive switching. However, the nonvolatile unipolar switching under the negative bias is ascribed to the formation/rupture of oxygen-vacancy conducting filaments. The simultaneously controllable transition between nonvolatile and volatile resistance switching by the polarity of the applied voltage exhibits great significance in the applications of in-memory computing technology.
引用
收藏
页码:22 / 28
页数:7
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