Preparation of ZnO electron transport layers by spray technology for perovskite solar cells

被引:12
作者
Zhu, Gongbo [1 ]
Shen, Yue [1 ]
Xu, Kai [1 ]
Huangfu, Minzan [1 ]
Cao, Meng [1 ]
Gu, Feng [1 ]
Wang, Linjun [1 ]
机构
[1] Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200041, Peoples R China
关键词
Perovskite; ZnO; Low temperature; CuI; Thickness; Spray method; THIN-FILMS; LOW-COST; EFFICIENCY; RECOMBINATION; CONDUCTIVITY; PERFORMANCE; INTERFACE; HALIDES; OXIDE;
D O I
10.1016/j.jallcom.2016.07.182
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
ZnO-based electron transport layers (ETLs) have caused wide public interest in flexible and wearable electronic devices owing to its higher electron mobility and crystalline without sintering processes. Here we describe a fast, inexpensive and low temperature spray method for the preparation of ZnO electron transport layers in CH3NH3PbI3-sensitized perovskite solar cells (PSCs) based on CuI holes transporter layers (HTL). The SEM results show that the surface morphology of ZnO films has an impact on the coverage rate of perovskite which is caused by the spray method. Optimization of the thickness of ZnO layers yielded highest power conversion efficiency of devices up to 3.47% with short-circuit current density Jsc, open-circuit voltage V-oc and fill factor were 14.21 mA/cm(2), 0.55 V and 44%, respectively. The factors that influence the performance of the cells have been analyzed by the impedance spectroscopy technique. (C) 2016 Elsevier B. V. All rights reserved.
引用
收藏
页码:192 / 198
页数:7
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