Oxygen-related deep level defects in solid-source MBE grown GaInP

被引：28
|
作者：
Xiang, N
Tukiainen, A
Dekker, J
Likonen, J
Pessa, M
机构：
[1] Tampere Univ Technol, Optoelect Res Ctr, FIN-33101 Tampere, Finland
[2] Aalto Univ, Phys Lab, FIN-02150 Espoo, Finland
[3] Tech Res Ctr Finland, Espoo 02044, Finland
来源：
JOURNAL OF CRYSTAL GROWTH | 2001年 / 227卷
关键词：
characterization; defects; impurities; molecular beam epitaxy; semiconducting indium gallium phosphide;
D O I：
10.1016/S0022-0248(01)00691-1
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We report the first observation of oxygen-related deep level defects in solid-source MBE-grown GaInP. Si-doped GaInP samples were studied by deep level transient spectroscopy (DLTS), secondary-ion mass spectrometry (SIMS), capacitance-voltage (C-V) profiles, and photoluminescence (PL). Different amounts of oxygen impurities was introduced into GaInP epilayers by growing with different phosphorus cracking temperatures. Four traps vr ere resolved by DLTS from the GaInP samples. Among them, two traps, with thermal activation energies of 0.45-0.46 and 0.63 0.82 eV, were found to be oxygen-related. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：244 / 248
页数：5
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