High-power AlGaAs/GaAs broad-area lasers grown by MBE

被引：1

作者：

Baoxue, B

Yi, B

Xin, G

Guotong, D

Dingsan, G

机构：

[1] Changchun Inst Opt & Fine Mech, Natl Key Lab High Power Semicond Lasers, Changchun 130022, Peoples R China

[2] Jilin Univ, Dept Elect Engn, State Key Lab Integrated Optoelectron, Changchun 130023, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2001年 / 227卷

关键词：

impurity-free vacancy diffusion; molecular beam epitaxy; laser diodes;

D O I：

10.1016/S0022-0248(01)00664-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A new broad area (BA) structure laser has been designed with a weak lateral index waveguide, an optical coupling layer and nonabsorbing windows to improve the light output properties of BA lasers. The wafer has been grown successfully by MBE and the BA stripe has been obtained mainly by an impurity-free vacancy diffusion (IFVD) technique. The prepared devices have been measured with a maximum output power of 3.2 W. A satisfactory far field (theta (parallel to)) output property is also obtained. (C) 2001 Elsevier Science B.V. All rights: reserved.

引用

页码：206 / 209

页数：4

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