Discrete states of conduction electrons bound to magnetoacceptors in quantum wells

被引：6

作者：

Bonifacie, S ^{[1
]}

Meziani, YM

Juillaguet, S

Chaubet, C

Raymond, A

Zawadzki, W

Thierry-Mieg, V

Zeman, J

机构：

[1] Univ Montpellier 2, Etud Semicond Grp, CNRS, UMR 5650, F-34095 Montpellier, France

[2] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

[3] CNRS, Lab Photon & Nanostruct, F-91460 Marcoussis, France

[4] CNRS, Lab Champs Magnet Intenses, F-91460 Marcoussis, France

来源：

PHYSICAL REVIEW B | 2003年 / 68卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.68.165330

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Discrete states of conduction electrons bound to ionized acceptors are observed in intraband magneto-optical experiments on Be-doped GaAs/Ga0.67Al0.33As quantum wells. The electrons are bound to acceptors by a joint effect of the quantum well and an external magnetic field. The observed transition energies are successfully described using states of single magnetoacceptors. The energies show evidence for oscillatory screening of acceptor potentials. Also, two disorder modes of the cyclotron resonance related to acceptor potential fluctuations are observed at higher filling factors.

引用

页数：5

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