High-Speed Switching and Giant Electroresistance in an Epitaxial Hf0.5Zr0.5O2-Based Ferroelectric Tunnel Junction Memristor

被引：32
作者：
Du, Xinzhe [1 ,2 ]
Sun, Haoyang [1 ,2 ]
Wang, He [1 ,2 ]
Li, Jiachen [1 ,2 ]
Yin, Yuewei [1 ,2 ]
Li, Xiaoguang [1 ,2 ,3 ]
机构：
[1] Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Dept Phys, Hefei 230026, Peoples R China
[2] Univ Sci & Technol China, CAS Key Lab Strongly Coupled Quantum Matter Phys, Hefei 230026, Peoples R China
[3] Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Peoples R China
来源：
ACS APPLIED MATERIALS & INTERFACES | 2022年 / 14卷 / 01期
基金：
中国国家自然科学基金;
关键词：
Hf0.5Zr0.5O2 epitaxial film; ferroelectric tunnel junction; high-speed switching; giant electroresistance; memristor; nonvolatile memories; synaptic device; THIN-FILMS; EXOCYTOSIS; MEMORY;
D O I：
10.1021/acsami.1c18165
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
HfO2-based ferroelectric materials are good candidates for constructing next-generation nonvolatile memories and high-performance electronic synapses and have attracted extensive attention from both academia and industry. Here, a Hf0.5Zr0.5O2-based ferroelectric tunnel junction (FTJ) memristor is successfully fabricated by epitaxially growing a Hf0.5Zr0.5O2 film on a 0.7 wt % Nb-doped SrTiO3 (001) substrate with a buffer layer of La2/3Sr1/3MnO3 (similar to 1 u.c.). The FTJ shows a high switching speed of 20 ns, a giant electroresistance ratio of similar to 834, and multiple states (eight states or three bits) with good retention >10(4) s. As a solid synaptic device, tunable synapse functions have also been obtained, including long-term potentiation, long-term depression, and spike-timingdependent plasticity. These results highlight the promising applications of Hf0.5Zr0.5O2-based FTJ in ultrafast-speed and high-density nonvolatile memories and artificial synapses.
引用
收藏
页码：1355 / 1361
页数：7
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