Numerical Study of Current Spreading and Light Extraction in Deep UV Light-Emitting Diode

被引:1
作者
Chen, Xinhui
Wu, Yuh-Renn [1 ]
机构
[1] Natl Taiwan Univ, Grad Inst Photon & Optoelect, Taipei 10617, Taiwan
来源
LIGHT-EMITTING DIODES: MATERIALS, DEVICES, AND APPLICATIONS FOR SOLID STATE LIGHTING XIX | 2015年 / 9383卷
关键词
AlGaN; deep ultraviolet; light emitting diode; current spreading; light extraction; graphene; ALGAN; OXIDE;
D O I
10.1117/12.2078752
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The current crowding effect in AlGaN 275 nm deep UVLEDs has been investigated by using 2D drift diffusion solver and the Monte Carlo ray-tracing method. Optimized conditions for both lateral and vertical structure have been presented in this paper by changing the spacing between 2 fingers. To improve the light extraction efficiency, using graphene as the contact layer and removing the p-GaN layer have also been discussed here. Thus with the markable increasing of LEE, the external quantum efficiency can be improved to 37.8% in the textured vertical structure without p-GaN layer.
引用
收藏
页数:8
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