Effects of Cooling Rate on Thermoelectric Properties of n-Type Bi2(Se0.4Te0.6)3 Compounds

被引:17
|
作者
Wang, S. Y. [1 ]
Xie, W. J. [1 ]
Li, H. [1 ]
Tang, X. F. [1 ]
Zhang, Q. J. [1 ]
机构
[1] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China
关键词
Bismuth telluride; thermoelectric properties; cooling rate; rapid preparation; ALLOYS; SEMICONDUCTOR; PHOTOVOLTAICS; PERFORMANCE; TELLURIDE; TE; SE;
D O I
10.1007/s11664-011-1559-3
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A series of Bi-2(Se0.4Te0.6)(3) compounds were synthesized by a rapid route of melt spinning (MS) combined with a subsequent spark plasma sintering (SPS) process. Measurements of the Seebeck coefficient, electrical conductivity, and thermal conductivity were performed over the temperature range from 300 K to 520 K. The measurement results showed that the cooling rate of melt spinning had a significant impact on the transport properties of electrons and phonons, effectively enhancing the thermoelectric properties of the compounds. The maximum ZT value reached 0.93 at 460 K for the sample prepared with the highest cooling rate, and infrared spectrum measurement results showed that the compound with lower tellurium content, Bi-2(Se0.4Te0.6)(3), possesses a larger optical forbidden gap (E (g)) compared with the traditional n-type zone-melted material with formula Bi-2(Se0.07Te0.93)(3). Our work provides a new approach to develop low-tellurium-bearing Bi2Te3-based compounds with good thermoelectric performance.
引用
收藏
页码:1150 / 1157
页数:8
相关论文
共 50 条
  • [11] Optimization of thermoelectric properties of n-type Bi2(Te,Se)3 with optimizing ball milling time
    Ji-Hee Son
    Min-Wook Oh
    Bong-Seo Kim
    Su-Dong Park
    Rare Metals, 2018, 37 (04) : 351 - 359
  • [12] Thermoelectric transport properties of n-type layered homologous (Bi2)m(Bi2Se3)n compounds
    Liu, Chen
    Liang, Chongbin
    Li, Fu
    Chen, Yuexing
    Zheng, Zhuanghao
    Fan, Ping
    JOURNAL OF ALLOYS AND COMPOUNDS, 2022, 928
  • [13] Antisite defects in n-type Bi2(Te,Se)3: Experimental and theoretical studies
    Oh, M. W.
    Son, J. H.
    Kim, B. S.
    Park, S. D.
    Min, B. K.
    Lee, H. W.
    JOURNAL OF APPLIED PHYSICS, 2014, 115 (13)
  • [14] Characterization of the Structural Modulations in n-type Bi2 (Te0.95Se0.05)3 Thermoelectric Compound
    Yoon, Sung Ho
    Lee, Kap Ho
    Hong, Soon Jik
    KOREAN JOURNAL OF METALS AND MATERIALS, 2015, 53 (02): : 123 - 132
  • [15] Investigation of the Effect of MoSe2 on the Thermoelectric Properties of n-Type Bi2Te2.4Se0.6
    Shalev, Tom
    Meroz, Omer
    Beeri, Ofer
    Gelbstein, Yaniv
    JOURNAL OF ELECTRONIC MATERIALS, 2015, 44 (06) : 1402 - 1407
  • [16] Fabrication and thermoelectric performance of textured n-type Bi2(Te,Se)3 by spark plasma sintering
    Jiang, J
    Chen, LD
    Bai, SQ
    Yao, Q
    Wang, Q
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2005, 117 (03): : 334 - 338
  • [17] Effects of Different Amount of Se-doping on Microstructures and Thermoelectric Properties of n-type Bi2Te3-xSex
    Zhang Qi-Hao
    Xu Lei-Lei
    Wang Lian-Jun
    Jiang Wan
    JOURNAL OF INORGANIC MATERIALS, 2014, 29 (11) : 1139 - 1144
  • [18] Mechanical and thermal processing effects on crystal defects and thermoelectric transport properties of Bi2(Se,Te)3 compounds
    Lu, Meng-Pei
    Liao, Chien-Neng
    JOURNAL OF ALLOYS AND COMPOUNDS, 2013, 571 : 178 - 182
  • [19] Ordered structure and high thermoelectric properties of Bi2(Te,Se)3 nanowire array
    Tan, Ming
    Deng, Yuan
    Wang, Yao
    NANO ENERGY, 2014, 3 : 144 - 151
  • [20] Investigation of the Effect of MoSe2 on the Thermoelectric Properties of n-Type Bi2Te2.4Se0.6
    Tom Shalev
    Omer Meroz
    Ofer Beeri
    Yaniv Gelbstein
    Journal of Electronic Materials, 2015, 44 : 1402 - 1407