Effects of Cooling Rate on Thermoelectric Properties of n-Type Bi2(Se0.4Te0.6)3 Compounds

被引：17

作者：

Wang, S. Y. ^{[1
]}

Xie, W. J. ^{[1
]}

Li, H. ^{[1
]}

Tang, X. F. ^{[1
]}

Zhang, Q. J. ^{[1
]}

机构：

[1] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2011年 / 40卷 / 05期

关键词：

Bismuth telluride; thermoelectric properties; cooling rate; rapid preparation; ALLOYS; SEMICONDUCTOR; PHOTOVOLTAICS; PERFORMANCE; TELLURIDE; TE; SE;

D O I：

10.1007/s11664-011-1559-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A series of Bi-2(Se0.4Te0.6)(3) compounds were synthesized by a rapid route of melt spinning (MS) combined with a subsequent spark plasma sintering (SPS) process. Measurements of the Seebeck coefficient, electrical conductivity, and thermal conductivity were performed over the temperature range from 300 K to 520 K. The measurement results showed that the cooling rate of melt spinning had a significant impact on the transport properties of electrons and phonons, effectively enhancing the thermoelectric properties of the compounds. The maximum ZT value reached 0.93 at 460 K for the sample prepared with the highest cooling rate, and infrared spectrum measurement results showed that the compound with lower tellurium content, Bi-2(Se0.4Te0.6)(3), possesses a larger optical forbidden gap (E (g)) compared with the traditional n-type zone-melted material with formula Bi-2(Se0.07Te0.93)(3). Our work provides a new approach to develop low-tellurium-bearing Bi2Te3-based compounds with good thermoelectric performance.

引用

页码：1150 / 1157

页数：8

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