Band offsets of polar and nonpolar GaN/ZnO heterostructures determined by synchrotron radiation photoemission spectroscopy

被引：26

作者：

Liu, J. W. ^{[1
]}

Kobayashi, A. ^{[1
]}

Toyoda, S. ^{[1
,2
,3
]}

Kamada, H. ^{[1
]}

Kikuchi, A. ^{[1
]}

Ohta, J. ^{[4
]}

Fujioka, H. ^{[2
,4
]}

Kumigashira, H. ^{[1
,2
,3
]}

Oshima, M. ^{[1
,2
,3
]}

机构：

[1] Univ Tokyo, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan

[2] Japan Sci & Technol Agcy JST CREST, Core Res Evolut Sci & Technol, Chiyoda Ku, Tokyo 1020075, Japan

[3] Univ Tokyo, Synchrotron Radiat Res Org, Bunkyo Ku, Tokyo 1138656, Japan

[4] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2011年 / 248卷 / 04期

关键词：

electronic band structure; GaN; heterojunction; polarity; ZnO; LASER-DIODES; GAN; ZNO; ULTRAVIOLET; GROWTH; SURFACES; GREEN;

D O I：

10.1002/pssb.201046459

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

C-plane (polar) and m-plane (nonpolar) GaN/ZnO heterostructures have been fabricated by pulsed laser deposition at room temperature, and their electronic structures have been characterized by synchrotron radiation photoemission spectroscopy. Based on the binding energies of core levels and valence band maximum values, the valence band offsets have been found to be 0.7 +/- 0.1 and 0.9 +/- 0.1 eV for polar and nonpolar GaN/ZnO heterojunctions, respectively. Both heterostructures show typeII band configurations with conduction band offsets of 0.8 +/- 0.1 and 1.0 +/- 0.1 eV, respectively. GaN and ZnO show upward and downward band bending toward the interface in the nonpolar GaN/ZnO heterojunction. However, both GaN and ZnO show upward band bending toward the interface in the polar heterojunction, which is attributed to negative charges. Analysis of N 1s spectra has revealed that N-O bonds exist only at the polar interface, which probably caused the formation of the negative charges. (c) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：956 / 959

页数：4

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