Electrical characteristics improvement of Dy2O3 thin films by in-situ vacuum anneal

被引：0
|
作者：
Yamamoto, H [1 ]
Taguchi, J [1 ]
Ohmi, S [1 ]
Iwai, H [1 ]
机构：
[1] Tokyo Inst Technol, Midori Ku, Yokohama, Kanagawa 2268502, Japan
来源：
PHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS I | 2003年 / 2002卷 / 28期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Dysprosium oxide (Dy2O3) deposited by MBE on n-Si (100) was investigated. The electrical characteristics of the films seemed to depend on the annealing process after deposition. In the case of ex-situ O-2 RTA for 5 min, the accumulation capacitance in the C-V characteristic decreased by the interfacial layer growth. On the other hands, it was found that excellent C-V characteristics without decrease of accumulation capacitance were obtained by in-situ vacuum anneal.
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页码：63 / 74
页数：12
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