Nonlinear piezoresistance effect in devices with stressed etch stop liner

被引：4

作者：

Bach, K. H. ^{[1
]}

Liebmann, R. ^{[1
]}

Nawaz, M. ^{[1
]}

Jungemann, C. ^{[2
]}

Ungersboeck, E. ^{[3
]}

机构：

[1] Infineon Technol, Am Campeon 1-12, D-81726 Munich, Germany

[2] Bundeswehr Univ, EIT4, D-85577 Neubiberg, Germany

[3] TU Wien, Inst Microelectronics, Vienna, A-1040, Austria

来源：

SISPAD 2007: SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2007 | 2007年

关键词：

D O I：

10.1007/978-3-211-72861-1_27

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Stressed etch stop liners (ESL) are a common way to increase device performance. Here we investigate the layout dependent channel stress for mono- and multi-layer deposition. By means of empirical pseudopotential method full band structures are calculated and based on full band Boltzmann equation mobilities are extracted. We present for the first time nonlinear mobility enhancement maps for two strain components, in channel and out-of-plane direction, showing that for typical ESL conditions both strain components are important for NFET and PFET.

引用

页码：113 / +

页数：2

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