Evolution and Updates of Advanced Photolithography Technology

被引:14
|
作者
Li Yanli [1 ]
Liu Xianhe [1 ]
Wu Qiang [1 ]
机构
[1] Fudan Univ, Sch Microelect, Shanghai 201203, Peoples R China
关键词
photolithography; photolithography process; exposure tools; photoresist; photomask; PHOTODECOMPOSABLE BASE CONCEPT; LOGIC;
D O I
10.3788/LOP202259.0922006
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Photolithography has been the main driving force for the sustained development of semiconductor integrated circuit technology. Its continuously improved resolution and pattern reproduction accuracy have successfully reduced the manufacturing linewidth of integrated circuit from 2 similar to 3 mu m more than 40 years ago to the current 10 similar to 15 nm. During the course of its evolution, many advanced technologies continue to emerge, such as projection lithography, phase-shifting mask, chemically amplified photoresist, and optical proximity effect correction, which timely ensure the advancement of integrated circuit technology along the prediction of the Moore's law. This paper uses the history of projection lithography as the clue, from 0.25 mu m to today's 5 nm, to analyze the process requirements and process window of each key technology node, including the added technologies and their respective roles, so as to provide a comprehensive presentation of the photolithography process and related technologies with the purpose to give the readers a professional and technical reference.
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页数:17
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