Single adatom exchange in surfactant-mediated epitaxial growth

被引：27

作者：

Ko, YJ

Yi, JY

Park, SJ

Lee, EH

Chang, KJ

机构：

[1] KOREA RES INST STAND & SCI,TAEJON 305600,SOUTH KOREA

[2] ELECTR & TELECOMMUN RES INST,RES DEPT,TAEJON 305600,SOUTH KOREA

来源：

PHYSICAL REVIEW LETTERS | 1996年 / 76卷 / 17期

关键词：

D O I：

10.1103/PhysRevLett.76.3160

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We propose a single adatom exchange mechanism for surfactant-mediated epitaxial growth through first-principles calculations for the Si epitaxy on a Si(001) surface covered by an As monolayer. The As segregation is initiated by the exchange of a Si adatom with a sublayer As site, with an activation energy of about 0.1 eV which is much lower than the value of similar to 1.0 eV for a dimer exchange. Adatom incorporation occurs with minimum surface diffusion, giving rise to a high nucleation density of two-dimensional islands, in good agreement with experiments.

引用

页码：3160 / 3163

页数：4

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