Single adatom exchange in surfactant-mediated epitaxial growth

被引：27
|
作者：
Ko, YJ
Yi, JY
Park, SJ
Lee, EH
Chang, KJ
机构：
[1] KOREA RES INST STAND & SCI,TAEJON 305600,SOUTH KOREA
[2] ELECTR & TELECOMMUN RES INST,RES DEPT,TAEJON 305600,SOUTH KOREA
来源：
PHYSICAL REVIEW LETTERS | 1996年 / 76卷 / 17期
关键词：
D O I：
10.1103/PhysRevLett.76.3160
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We propose a single adatom exchange mechanism for surfactant-mediated epitaxial growth through first-principles calculations for the Si epitaxy on a Si(001) surface covered by an As monolayer. The As segregation is initiated by the exchange of a Si adatom with a sublayer As site, with an activation energy of about 0.1 eV which is much lower than the value of similar to 1.0 eV for a dimer exchange. Adatom incorporation occurs with minimum surface diffusion, giving rise to a high nucleation density of two-dimensional islands, in good agreement with experiments.
引用
收藏
页码：3160 / 3163
页数：4
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