A Non Quasi-Static Small Signal Model for Long Channel Symmetric DG MOSFET

被引：0

作者：

Sarkar, Sudipta ^{[1
]}

Roy, Ananda S. ^{[2
]}

Mahapatra, Santanu ^{[1
]}

机构：

[1] Indian Inst Sci, Nano Scale Device Res Lab, Ctr Elect Design & Technol, Bangalore 560012, Karnataka, India

[2] Intel Corp, Hillsdale, MI 95051 USA

来源：

23RD INTERNATIONAL CONFERENCE ON VLSI DESIGN | 2010年

关键词：

Non Quasi-Static Analysis; Double-Gate MOSFET;

D O I：

10.1109/VLSI.Design.2010.28

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

We propose a compact model for small signal non quasi static analysis of long channel symmetric double gate MOSFET The model is based on the EKV formalism and is valid in all regions of operation and thus suitable for RF circuit design Proposed model is verified with professional numerical device simulator and excellent agreement is found well beyond the cut-off frequency

引用

页码：21 / +

页数：2

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