Structural and optical properties of ge nanocrystals in SiO2 glasses fabricated by multi-energy ion implantation

被引:0
|
作者
Masuda, K [1 ]
Yamamoto, M [1 ]
Kanaya, M [1 ]
Kanemitsu, Y [1 ]
机构
[1] Nara Inst Sci & Technol, Grad Sch Mat Sci, Nara 6300101, Japan
关键词
D O I
10.1109/IMNC.2000.872687
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:172 / 173
页数:2
相关论文
共 50 条
  • [1] Structural and optical properties of Ge nanocrystals obtained by hot ion implantation into SiO2 and further ion irradiation
    Bregolin, F. L.
    Behar, M.
    Sias, U. S.
    JOURNAL OF LUMINESCENCE, 2012, 132 (06) : 1339 - 1344
  • [2] The effect of Ge implantation dose on the optical properties of Ge nanocrystals in SiO2
    Mestanza, S. N. M.
    Rodriguez, E.
    Frateschi, N. C.
    NANOTECHNOLOGY, 2006, 17 (18) : 4548 - 4553
  • [3] Optical and structural properties of encapsulated Si nanocrystals formed in SiO2 by ion implantation
    Iwayama, TS
    Hama, T
    Hole, DE
    Boyd, IW
    SURFACE & COATINGS TECHNOLOGY, 2002, 158 : 712 - 716
  • [4] Optical properties of Si nanocrystals formed in SiO2 by ion implantation
    White, CW
    Withrow, SP
    Meldrum, A
    Budai, JD
    Hembree, DM
    Zhu, JG
    Henderson, DO
    Prawer, S
    AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY-1998, 1998, 507 : 249 - 254
  • [5] Embedded Ge nanocrystals in SiO2 synthesized by ion implantation
    Baranwal, V.
    Gerlach, J. W.
    Lotnyk, A.
    Rauschenbach, B.
    Karl, H.
    Ojha, S.
    Avasthi, D. K.
    Kanjilal, D.
    Pandey, Avinash C.
    JOURNAL OF APPLIED PHYSICS, 2015, 118 (13)
  • [6] Characteristic photoluminescence properties of Si nanocrystals in SiO2 fabricated by ion implantation and annealing
    Shimizu-Iwayama, T
    Hama, T
    Hole, DE
    Boyd, IW
    SOLID-STATE ELECTRONICS, 2001, 45 (08) : 1487 - 1494
  • [7] The evolution of the morphology of Ge nanocrystals formed by ion implantation in SiO2
    Desnica, UV
    Dubcek, P
    Salamon, K
    Desnica-Frankovic, ID
    Buljan, M
    Bernstoff, S
    Serincan, U
    Turan, R
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2005, 238 (1-4): : 272 - 275
  • [8] Studies on the formation of Si nanocrystals in SiO2 by Ge ion implantation
    Giri, PK
    Kesavamoorthy, R
    Panigrahi, BK
    Nair, KGM
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2006, 244 (01): : 56 - 59
  • [9] Synthesis of Ge nanocrystals in thermal SiO2 films by Ge+ ion implantation
    Zhang, JY
    Bao, XM
    Ye, YH
    THIN SOLID FILMS, 1998, 323 (1-2) : 68 - 71
  • [10] Structural and electrical properties of Ge nanocrystals embedded in SiO2 by ion implantation and annealing -: art. no. 104330
    Duguay, S
    Grob, JJ
    Slaoui, A
    Le Gall, Y
    Amann-Liess, M
    JOURNAL OF APPLIED PHYSICS, 2005, 97 (10)