Fe doping-stabilized γ-Ga2O3 thin films with a high room temperature saturation magnetic moment

被引：33

作者：

Huang, Yuanqi ^{[1
]}

Gao, Ang ^{[2
]}

Guo, Daoyou ^{[3
]}

Lu, Xia ^{[4
,5
]}

Zhang, Xiao ^{[1
,6
]}

Huang, Yalei ^{[3
]}

Yu, Jie ^{[1
]}

Li, Shan ^{[1
]}

Li, Peigang ^{[1
,6
]}

Tang, Weihua ^{[1
,6
]}

机构：

[1] Beijing Univ Posts & Telecommun, Sch Sci, Lab Informat Funct Mat & Devices, Beijing 100876, Peoples R China

[2] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

[3] Zhejiang Sci Tech Univ, Dept Phys, Ctr Optoelect Mat & Devices, Hangzhou 310018, Peoples R China

[4] Sun Yat Sen Univ, Sch Mat, Guangzhou 510275, Peoples R China

[5] Beijing Univ Chem Technol, Beijing Adv Innovat Ctr Soft Matter Sci & Engn, Beijing 100029, Peoples R China

[6] Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China

来源：

JOURNAL OF MATERIALS CHEMISTRY C | 2020年 / 8卷 / 02期

基金：

中国国家自然科学基金;

关键词：

CATION VACANCY; FERROMAGNETISM; NANOPARTICLES; ENHANCEMENT; MORPHOLOGY; GROWTH; OXIDES; PHASE;

D O I：

10.1039/c9tc05823k

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Saturation magnetic moment (M-sm) is a key evaluation parameter of diluted magnetic semiconductors (DMSs). The higher the M-sm, the more widespread the applications of electron spin for non-volatile information manipulation and storage. In this paper, first-principles simulations predicted that cation-deficient gamma-Ga2O3, having an intrinsic magnetic moment per formula unit cell of about 1 mu(B), is an inherent candidate to prepare DMS with high M-sm. To activate the potential of its magnetism, Fe was introduced as a dopant. A thermostable Fe-doped gamma-Ga2O3 thin film with high room temperature (RT) M-sm of 5.73 mu(B)/Fe was first obtained using the laser molecular beam epitaxy (L-MBE) technique. While combining theoretical calculations and experimental data, the main source of RT ferromagnetism could be ascribed to the strong ferromagnetic (FM) coupling between Fe ions, p-d orbital overlap of the Fe-O bond, and defects. Our results provide a feasible model for designing high-performance gamma-Ga2O3-based DMSs.

引用

页码：536 / 542

页数：7