Ultra-thin QFN-Like 3D Package with 3D Integrated Passive Devices

被引:2
|
作者
Ghannam, Ayad [1 ]
van Haare, Niek [2 ]
Bravin, Julian [3 ]
Brandl, Elisabeth [3 ]
Brandstatter, Birgit [4 ]
Klingler, Hannes [4 ]
Auer, Benedikt [4 ]
Meunier, Philippe [5 ]
Kersjes, Sebastiaan [2 ]
机构
[1] 3DiS Technol SAS, 478 Rue Decouverte,Mini Parc 3,CS 67624, F-31676 Labege, France
[2] Besi Netherlands BV, NL-6921 RW Duiven, Netherlands
[3] EV Grp E Thallner GmbH, DI Erich Thallner Str 1, A-4782 St Florian, Austria
[4] Besi Austria GmbH, Innstr 16, A-6241 Radfeld, Austria
[5] NXP Semicond France, 2 Esplanade Anton Philips,BP 20000, F-14906 Caen, France
基金
欧盟地平线“2020”;
关键词
3D-WLSiP; 3D-WLP; 3D-RDL; 3D-IPD; High-Q; QFN-like; Ultra-thin package; WLP;
D O I
10.1109/ECTC.2019.00276
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this work, a new wafer-level 3D packaging technology is developed to enable integration of an ultra-thin QFN-like (quad-flat no-leads) 3D package that targets both effective electrical and thermal properties and a thickness smaller than 200 mu m. The proposed architecture allows 3D interconnection of stacked staggered dies and integration of compact, high-performance 3D integrated passive devices inside the package for added functionality and electrical performance. The developed technology consists of using debonding from a temporary carrier, Cu 2D-RDL (Redistribution Layer), accurate thin die pick & place, 3D-RDL and overmolding processes to integrate a QFN-like 3D package. Interconnection between die and package I/O is achieved using conformal 3D-RDL, thus without wire-bond, flip-chip or TSV.
引用
收藏
页码:1789 / 1795
页数:7
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