Charged excitons in self-assembled quantum dots

被引：0

作者：

Warburton, RJ ^{[1
]}

Urbaszek, B ^{[1
]}

McGhee, EJ ^{[1
]}

Schulhauser, C ^{[1
]}

Högele, A ^{[1
]}

Karrai, K ^{[1
]}

Govorov, AO ^{[1
]}

Garcia, JM ^{[1
]}

Gerardot, BD ^{[1
]}

Petroff, PM ^{[1
]}

机构：

[1] Heriot Watt Univ, Dept Phys, Edinburgh, Midlothian, Scotland

来源：

QUANTUM CONFINED SEMICONDUCTOR NANOSTRUCTURES | 2003年 / 737卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have succeeded in generating highly charged excitons in InAs self-assembled quantum dots by embedding the dots in a field-effect heterostructure. We discover an excitonic Coulomb blockage: over large regions of gate voltage, the exciton charge remains constant. We present here a summary of the emission properties of the charged excitons.

引用

页码：95 / 105

页数：11

共 5 条

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