Porous silicon in NO2:: A chemisorption mechanism for enhanced electrical conductivity

被引：10
作者：
Garrone, E
Borini, S
Rivolo, P
Boarino, L
Geobaldo, F
Amato, G [1 ]
机构：
[1] Ist Elettrotecnico Nazl Galileo Ferraris, Turin, Italy
[2] Politecn Torino, Dipartimento Sci Mat & Ingn Chim, Turin, Italy
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2003年 / 197卷 / 01期
关键词：
D O I：
10.1002/pssa.200306476
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The interaction between NO, molecules and the array of Si nanowires composing the porous silicon skeleton is discussed. In a wide pressure regime ranging from 10(-2) to 10(0) Torr, reactivation of the pristine acceptor atoms takes place provoking the generation of a considerable amount of free carriers inside the Si wires. At higher pressure, traces of NO2- species have been observed. Such processes also appear to be different in terms of reversibility. Chemisorption of NO2 molecules is demonstrated to be the mechanism responsible for the recovery of the semiconducting character of porous silicon.
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页码：103 / 106
页数：4
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共 25 条
  • [11] IR detection of NO2 using p+ porous silicon as a high sensitivity sensor
    Geobaldo, F
    Onida, B
    Rivolo, P
    Borini, S
    Boarino, L
    Rossi, A
    Amato, G
    Garrone, E
    [J]. CHEMICAL COMMUNICATIONS, 2001, (21) : 2196 - 2197
  • [12] GROSMAN A, 1997, EMIS DATA REV SERIES, P375
  • [13] BORON-HYDROGEN COMPLEXES IN CRYSTALLINE SILICON
    HERRERO, CP
    STUTZMANN, M
    BREITSCHWERDT, A
    [J]. PHYSICAL REVIEW B, 1991, 43 (02): : 1555 - 1575
  • [14] HYDROGEN IN CRYSTALLINE SEMICONDUCTORS - A REVIEW OF EXPERIMENTAL RESULTS
    JOHNSON, NM
    DOLAND, C
    PONCE, F
    WALKER, J
    ANDERSON, G
    [J]. PHYSICA B, 1991, 170 (1-4): : 3 - 20
  • [15] RESISTIVITY OF POROUS SILICON - A SURFACE EFFECT
    LEHMANN, V
    HOFMANN, F
    MOLLER, F
    GRUNING, U
    [J]. THIN SOLID FILMS, 1995, 255 (1-2) : 20 - 22
  • [16] NEUTRALIZATION OF ACCEPTORS IN SILICON BY ATOMIC-HYDROGEN
    PANKOVE, JI
    WANCE, RO
    BERKEYHEISER, JE
    [J]. APPLIED PHYSICS LETTERS, 1984, 45 (10) : 1100 - 1102
  • [17] PANOVE JI, 1971, OPTICAL PROCESSES SE
  • [18] Joint FTIR and TPD study of hydrogen desorption from p+-type porous silicon
    Rivolo, P
    Geobaldo, F
    Rocchia, M
    Amato, G
    Rossi, AM
    Garrone, E
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2003, 197 (01): : 217 - 221
  • [19] THEORY OF TRANSPORT IN SILICON QUANTUM WIRES
    SANDERS, GD
    STANTON, CJ
    CHANG, YC
    [J]. PHYSICAL REVIEW B, 1993, 48 (15): : 11067 - 11076
  • [20] SIMONS AJ, 1997, EMIS DATAREVIEW SERI, P176
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