Low-Loss Waveguide Bends by Advanced Shape for Photonic Integrated Circuits

被引：38

作者：

Song, Jeong Hwan ^{[1
]}

Kongnyuy, Tangla David ^{[1
]}

De Heyn, Peter ^{[1
]}

Lardenois, Sebastien ^{[1
]}

Jansen, Roelof ^{[1
]}

Rottenberg, Xavier ^{[1
]}

机构：

[1] IMEC, B-3001 Leuven, Belgium

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 2020年 / 38卷 / 12期

关键词：

Silicon nitride; Shape; Silicon; Loss measurement; Indexes; Waveguide junctions; Waveguide transitions; Bends; silicon; silicon nitride; SOI; waveguides; SILICON; REDUCTION; COMPACT;

D O I：

10.1109/JLT.2020.2978420

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the design and experiment of advanced bends which are composed of widening width and varying radius. Advanced bends are based on silicon nitride waveguide for the wavelength of 850 nm and silicon waveguide for the wavelength of 1550 nm. The reduction of bending loss from 0.13 to 0.04 dB/90 degrees by the advanced shape on a silicon nitride waveguide bend with 15 mu m-radius at the wavelength of 850 nm was achieved. The bending loss from the silicon advanced bend was measured to be 0.012 dB/90 degrees when R = 2 mu m at the wavelength of 1550 nm. This is the best result of 2 mu m-bends in a 220 nm-SOI platform at 1550 nm.

引用

收藏

页码：3273 / 3279

页数：7

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