An Ultrafast Adaptively Biased Capacitorless LDO With Dynamic Charging Control

被引:69
作者
Ming, Xin [1 ]
Li, Qiang [1 ]
Zhou, Ze-kun [1 ]
Zhang, Bo [1 ]
机构
[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
基金
中国国家自然科学基金;
关键词
Capacitive coupling; common gate; high bandwidth; low power; low-dropout regulator (LDO); system-on-a-chip (SoC); LOW-DROPOUT REGULATOR; LOW-QUIESCENT CURRENT; VOLTAGE;
D O I
10.1109/TCSII.2011.2177698
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This brief presents a current-efficient fully integrated low-dropout regulator (LDO) for system-on-a-chip applications. A common-gate error amplifier with high bandwidth and slew rate is proposed to reduce the output voltage spike and the response time of the LDO greatly. In addition, the loop employs a direct dynamic charging technique to enhance load-transient responses by directly detecting voltage variations through a capacitive coupling high-pass filter. The circuit has been implemented in a 0.35-mu m standard complementary metal-oxide-semiconductor process and occupies an active chip area of 0.064 mm(2). Experimental results show that it can deliver a load current of 100 mA at a dropout voltage of 150 mV. It only consumes a quiescent current of 7 mu A at light loads and can recover within 0.15 mu s, even under the maximum load current change. Consequently, a faster and more accurate capacitorless LDO can be achieved.
引用
收藏
页码:40 / 44
页数:5
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